AEC-Q101 Diodo, MBR140SFT3G, Rectificador Schottky, 1A, 40V Barrera Schottky, SOD-123FL, 2-Pines

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

Guard ring for Stress Protection
Low Forward Voltage
125 C Operating Junction Temperature
Package Designed for Optimal Automated Assembly
ESD Ratings: Machine Model = C, Human Body Model = 3B
All Packages are Pb-Free
PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements