- Código RS:
- 186-7153
- Nº ref. fabric.:
- FDG6321C
- Fabricante:
- onsemi
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Lamentablemente no tenemos stock de este producto y no está disponible para reservar en este momento.
Precio unitario (Suministrado en Carretes de 3000)
0,175 €
(exc. IVA)
0,212 €
(inc.IVA)
Unidades | Por unidad | Por Carrete* |
---|---|---|
3000 + | 0,175 € | 525,00 € |
*precio indicativo
- Código RS:
- 186-7153
- Nº ref. fabric.:
- FDG6321C
- Fabricante:
- onsemi
Documentación Técnica
Legislación y Conformidad
Datos del Producto
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
N-Ch
0.50 A, 25 V
RDS(ON) = 0.45 Ω @ VGS= 4.5 V
RDS(ON) = 0.60 Ω @ VGS= 2.7 V
P-Ch
-0.41 A, -25 V
RDS(ON) = 1.1 Ω @ VGS= -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Applications
This product is general usage and suitable for many different applications.
0.50 A, 25 V
RDS(ON) = 0.45 Ω @ VGS= 4.5 V
RDS(ON) = 0.60 Ω @ VGS= 2.7 V
P-Ch
-0.41 A, -25 V
RDS(ON) = 1.1 Ω @ VGS= -4.5 V
RDS(ON) = 1.5 Ω @ VGS= -2.7 V
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Applications
This product is general usage and suitable for many different applications.
Especificaciones
Atributo | Valor |
---|---|
Tipo de Encapsulado | SC-70 |
Tipo de Montaje | Montaje superficial |
Disipación de Potencia Máxima | 300 mW |
Conteo de Pines | 6 |
Número de Elementos por Chip | 2 |
Temperatura Máxima de Funcionamiento | +150 °C |
Dimensiones | 2.2 x 1.35 x 1mm |
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