- Código RS:
- 186-7195
- Nº ref. fabric.:
- NSS40200LT1G
- Fabricante:
- onsemi
3000 Disponible para entrega en 24/48 horas
Añadido
Precio unitario (Suministrado en Carretes de 3000)
0,082 €
(exc. IVA)
0,099 €
(inc.IVA)
Unidades | Por unidad | Por Carrete* |
3000 + | 0,082 € | 246,00 € |
*precio indicativo |
- Código RS:
- 186-7195
- Nº ref. fabric.:
- NSS40200LT1G
- Fabricante:
- onsemi
Documentación Técnica
Legislación y Conformidad
Datos del Producto
Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
Benefits
Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
Applications
Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
Benefits
Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
Applications
Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
Especificaciones
Atributo | Valor |
---|---|
Tipo de Transistor | PNP |
Tensión Máxima Colector-Emisor | -40 V |
Tipo de Encapsulado | SOT-23 |
Tipo de Montaje | Montaje superficial |
Disipación de Potencia Máxima | 540 mW |
Ganancia Mínima de Corriente DC | 250 |
Configuración de transistor | Simple |
Tensión Máxima Emisor-Base | -7 V dc |
Conteo de Pines | 3 |
Número de Elementos por Chip | 1 |
Temperatura Máxima de Funcionamiento | +150 °C |
Dimensiones | 3.04 x 1.4 x 1.01mm |
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