Transistor digital, FDMC8462, PQFN, 8 pines

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A
Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.8A
Low Profile - 1mm max in Power 33
Applications
This product is general usage and suitable for many different applications.