Transistor digital, FDS8935, Dual SOIC, 8 pines

This P-channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Applications
This product is general usage and suitable for many different applications.
Load Switch
Synchronous Rectifier