IGBT, SIHP10N40D-E3
- Código RS:
- 180-7347
- Nº ref. fabric.:
- SIHP10N40D-E3
- Fabricante:
- Vishay
Producto Descatalogado
- Código RS:
- 180-7347
- Nº ref. fabric.:
- SIHP10N40D-E3
- Fabricante:
- Vishay
Documentación Técnica
Legislación y Conformidad
- COO (País de Origen):
- CN
Datos del Producto
Vishay MOSFET
The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 400V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 600mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 147W and continuous drain current of 10A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fast switching
• High body diode for durability
• Lead (Pb) free component
• Low area specific on-resistance
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced capacitive switching losses
• Simple gate drive circuitry
• High body diode for durability
• Lead (Pb) free component
• Low area specific on-resistance
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced capacitive switching losses
• Simple gate drive circuitry
Applications
• Battery chargers
• Displays (LCD or plasma TVs)
• Motor drives
• SMPS power supplies
• Welding - Induction heating
• Displays (LCD or plasma TVs)
• Motor drives
• SMPS power supplies
• Welding - Induction heating
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested
• BS EN 61340-5-1:2007
• UIS tested