Placa de desarrollo IGBT, Driver MOSFET STMicroelectronics Demonstration Board - EVALSTDRV600HB8

The STMicroelectronics EVALSTDRV600HB8 demonstration board kit is developed for L638xE and L639x series high voltage compatible gate drivers and allows evaluating all of the gate driver features and functionalities while driving a half-bridge power stage based on N-channel MOSFETs or IGBTs in several different packages and with a voltage rating up to 600V. Vital components such as filtering and bootstrap capacitor are already mounted on the PCB. Passive components footprints are compatible with both SMT and T. H. Components, so they allow a fast and easy configuration and modification. This demonstration board kit is used for L638xE and L639x high voltage gates.

• Ability to drive asymmetrical half-bridges and switched reluctance motors
• Active high or active low LIN for single input gate driving
Diseño compacto y simplificado
Compatible con MOSFET/IGBT en DPAK, D2PAK, TO-220, TO-220FP
Entradas dedicadas de accionamiento de lado alto y bajo
Los controladores de puerta del kit incluyen diferentes funcionalidades y características
Configuración de medio puente
Carril de alta tensión de hasta 600V
Diodo de autocarga integrado
Interbloqueo para protección contra conducción transversal
Tiempo de desconexión interno o sin tiempo de desconexión