Optoacoplador onsemi CNY de 1 canal, Vf= 1.65V, Viso= 4.17 kVrms, OUT. Fototransistor, mont. superficial, encapsulado

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
Applications
AC-DC Merchant Power Supply
Consumer Appliances
Industrial Motor