Optoacoplador onsemi FOD de 1 canal, Vf= 1.8V, Viso= 5 kVrms, OUT. IGBT, MOSFET, mont. superficial, encapsulado SOIC, 6
- Código RS:
- 186-7261
- Nº ref. fabric.:
- FOD8342R2
- Fabricante:
- onsemi
999999999 Disponible para entrega en 4 día(s) laborable(s).
Precio unitario (Suministrado en Carretes de 1000)
1,369 €
(exc. IVA)
1,656 €
(inc.IVA)
Unidades | Por unidad | Por Carrete* |
|---|---|---|
| 1000 - 1000 | 1,369 € | 1.369,00 € |
| 2000 - 4000 | 1,295 € | 1.295,00 € |
| 5000 - 9000 | 1,247 € | 1.247,00 € |
| 10000 + | 1,183 € | 1.183,00 € |
*precio indicativo
- Código RS:
- 186-7261
- Nº ref. fabric.:
- FOD8342R2
- Fabricante:
- onsemi
Documentación Técnica
Legislación y Conformidad
Datos del Producto
FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
20 kV/μs Minimum Common Mode Rejection
Wide Supply Voltage Range: 10 V to 30 V
Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width DistortionUnder-Voltage Lockout (UVLO) with Hysteresis
Extended Industrial Temperate Range: -40°C to 100°C
Applications
AC and Brushless DC Motor Drives
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
20 kV/μs Minimum Common Mode Rejection
Wide Supply Voltage Range: 10 V to 30 V
Fast Switching Speed Over Full Operating Temperature Range – 210 ns Maximum Propagation Delay – 65 ns Maximum Pulse Width DistortionUnder-Voltage Lockout (UVLO) with Hysteresis
Extended Industrial Temperate Range: -40°C to 100°C
Applications
AC and Brushless DC Motor Drives
Industrial Inverter
Uninterruptible Power Supply
Induction Heating
Isolated IGBT/Power MOSFET Gate Drive
Especificaciones
Atributo | Valor |
|---|---|
| Tipo de Montaje | Montaje superficial |
| Dispositivo de Salida | IGBT, MOSFET |
| Tensión Directa Máxima | 1.8V |
| Número de Canales | 1 |
| Número de Pines | 6 |
| Encapsulado | SOIC |
| Tiempo de Subida Típico | 38ns |
| Corriente de Entrada Máxima | 10 mA |
| Tensión de Aislamiento | 5 kVrms |
| Salida Lógica | Sí |
| Tiempo de Bajada Típico | 24ns |
| Serie | FOD |
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