Transistor digital, FDMB3800N, Dual WDFN, 8 pines

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A
Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A
Fast switching speed
Low gate Charge
High performance trench technology for extremely low rDS(on)
High power and current handling capability.
Applications
This product is general usage and suitable for many different applications.