Transistor digital, FDMA430NZ, MicroFET 2 x 2, 6 pines

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.

RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A
Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
HBM ESD protection level > 2.5k V typical (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications.