Fotodiodo de silicio onsemi C, luz visible, mont. superficial, encapsulado SMT de 4 pines

>40% PDE at 420 nm, and extended sensitivity to 300 nm for improved UV sensitivity
Ultra-low dark count rates of 30 kHz/mm2
Exceptional breakdown voltage uniformity of ±250 mV over all C-Series products
Temperature stability of 21.5 mV/°C
Bias voltage of <30 V
Ultra-fast rise times of 300 ps with 600 ps pulse width from a unique ’fast output’ terminal
1 mm, 3 mm, and 6 mm sensor sizes
Solid state alternative to the legacy PMT for a wide range of applications
High gain of 106 leads to single photon sensitivity
Best Vbr uniformity in the industry
Compact, robust packaging
Evaluation boards with either SMA connectors or pins are available for easy evaluation
Applications
Medical Imaging
Hazard & Threat
3D Ranging & Sensing
Biophotonics & Sciences
High Energy Physics