Transistor digital, FDMC86262P, MLP 3.3 x 3.3, 8 pines

This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.

Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A
Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A
Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
Optimised for Fast Switching Applications as well as Load Switch Applications
Applications
Industrial
Portable and Wireless