MOSFET onsemi FDPF4D5N10C, VDSS 100 V, ID 128 A, TO-220F de 3 pines, , config. Simple
- Código RS:
- 181-1917
- Nº ref. fabric.:
- FDPF4D5N10C
- Fabricante:
- onsemi
586 Disponible para entrega en 4 día(s) laborable(s).
Precio unitario (Suministrado en múltiplos de 2)
4,12 €
(exc. IVA)
4,99 €
(inc.IVA)
Unidades | Por unidad | Por Pack* |
|---|---|---|
| 2 + | 4,12 € | 8,24 € |
*precio indicativo
- Código RS:
- 181-1917
- Nº ref. fabric.:
- FDPF4D5N10C
- Fabricante:
- onsemi
Documentación Técnica
Legislación y Conformidad
- COO (País de Origen):
- CN
Datos del Producto
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 48nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 48nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter
Especificaciones
Atributo | Valor |
|---|---|
| Tipo de Canal | N |
| Corriente Máxima Continua de Drenaje | 128 A |
| Tensión Máxima Drenador-Fuente | 100 V |
| Tipo de Encapsulado | TO-220F |
| Tipo de Montaje | Montaje en orificio pasante |
| Conteo de Pines | 3 |
| Resistencia Máxima Drenador-Fuente | 4,5 mΩ |
| Modo de Canal | Mejora |
| Tensión de umbral de puerta máxima | 4V |
| Tensión de umbral de puerta mínima | 2V |
| Disipación de Potencia Máxima | 37.5 W |
| Configuración de transistor | Simple |
| Tensión Máxima Puerta-Fuente | ±20 V |
| Número de Elementos por Chip | 1 |
| Ancho | 4.9mm |
| Longitud | 10.36mm |
| Temperatura Máxima de Funcionamiento | +175 °C |
| Carga Típica de Puerta @ Vgs | 48 nC @ 10 V |
| Altura | 16.07mm |
| Temperatura de Funcionamiento Mínima | -55 °C |
| Tensión de diodo directa | 1.3V |
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