- Código RS:
- 188-2580
- Nº ref. fabric.:
- W9712G6KB25I
- Fabricante:
- Winbond
Temporalmente fuera de stock. Disponible a partir del 03/12/2024, con entrega en 4 día(s) laborable(s).
Añadido
Precio unitario (En una bandeja de 209)
1,664 €
(exc. IVA)
2,013 €
(inc.IVA)
Unidades | Por unidad | Por Bandeja* |
209 + | 1,664 € | 347,776 € |
*precio indicativo |
- Código RS:
- 188-2580
- Nº ref. fabric.:
- W9712G6KB25I
- Fabricante:
- Winbond
Documentación Técnica
Legislación y Conformidad
Datos del Producto
The W9712G6KB is a 128M bits DDR2 SDRAM and speed involving -25, 25I and -3.
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5 and 6
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and /CLK)
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS
Posted /CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
CAS Latency: 3, 4, 5 and 6
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and /CLK)
Data masks (DM) for write data
Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS
Posted /CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Especificaciones
Atributo | Valor |
---|---|
Tamaño de la Memoria | 128Mbit |
Organización | 16M x 8 bit |
Clase SDRAM | DDR2 |
Transmisión de Datos | 200MHZ |
Ancho del Bus de Datos | 16bit |
Ancho del Bus de Direcciones | 15bit |
Número de Bits de Palabra | 8bit |
Tiempo de Acceso Aleatorio Máximo | 0.4ns |
Número de Palabras | 16M |
Tipo de Montaje | Montaje superficial |
Tipo de Encapsulado | TFBGA |
Conteo de Pines | 84 |
Dimensiones | 12.6 x 8.1 x 0.8mm |
Altura | 0.8mm |
Longitud | 12.6mm |
Ancho | 8.1mm |
Tensión de Alimentación Máxima de Funcionamiento | 1.9 V |
Temperatura Máxima de Funcionamiento | +95 °C |
Tensión de Alimentación de Funcionamiento Mínima | 1.7 V |
Temperatura de Funcionamiento Mínima | -40 °C |
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