SDRAM S27KS0641DPBHI020, 64Mbit, 333Mbit/s, Montaje superficial, FBGA, 24 pines

3.0 V I/O, 11 bus signals
Single ended clock (CK)
1.8 V I/O, 12 bus signals
Differential clock (CK, CK#)
Chip Select (CS#)
8-bit data bus (DQ[7:0])
Read-Write Data Strobe (RWDS)
Bidirectional Data Strobe / Mask
Output at the start of all transactions to indicate refresh latency
Output during read transactions as Read Data Strobe
Input during write transactions as Write Data Mask
RWDS DCARS Timing
During read transactions RWDS is offset by a second clock, phase shifted from CK
The Phase Shifted Clock is used to move the RWDS transition edge within the read data eye
Up to 333 MBps
Double-Data Rate (DDR) - two data transfers per clock
166 MHz clock rate (333 MBps) at 1.8 V VCC
100 MHz clock rate (200 MBps) at 3.0 V VCC
Sequential burst transactions
Configurable Burst Characteristics
Wrapped burst lengths:
16 bytes (8 clocks)
32 bytes (16 clocks)
64 bytes (32 clocks)
128 bytes (64 clocks)
Linear burst
Hybrid option - one wrapped burst followed by linear burst
Wrapped or linear burst type selected in each transaction
Configurable output drive strength
Low Power Modes
Deep Power Down
Package
24-ball FBGA