MOSFET Infineon, N-Canal IRLIZ34NPBF, VDSS 55 V, ID 22 A, TO-220FP, Mejora de 3 pines, 1, config. Simple

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Código RS:
165-8101
Nº ref. fabric.:
IRLIZ34NPBF
Fabricante:
Infineon
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Marca

Infineon

Tipo de producto

MOSFET

Tipo de canal

N

Tensión máxima Drenador-Fuente (Vds)

55 V

Corriente continua máxima de drenaje (ld)

22 A

Encapsulado

TO-220FP

Modo de canal

Mejora

Número de pines

3

Número de elementos por chip

1

Configuración de transistor

Simple

Tensión directa (Vf)

1.3 V

Altura

8.9 mm

Longitud

10.6 mm

Resistencia máxima Drenador-Fuente (Rds)

60 mΩ

Tensión máxima de la fuente de la puerta

-16 V, +16 V

Temperatura de funcionamiento máxima

175 °C

Disipación de potencia máxima (Pd)

37 W

Temperatura de Funcionamiento Mínima

-55 °C

Tipo de montaje

Orificio pasante

Serie

HEXFET

Anchura

4.8 mm

COO (País de Origen):
CN

Infineon HEXFET Series MOSFET, 22A Maximum Continuous Drain Current, 37W Maximum Power Dissipation - IRLIZ34NPBF


This MOSFET is crafted for high-efficiency applications and provides essential characteristics for professionals in automation and electronics. Its N-channel configuration operates in enhancement mode, making it suitable for a range of tasks. The design ensures robust performance in applications that require dependable switching and power management.

Features & Benefits


• Handles continuous drain current up to 22A for solid performance

• Operates at a drain-source voltage of 55V for versatile applications

• Low thermal resistance enhances heat dissipation

• Fast switching speeds improve system responsiveness

• High power dissipation capability supports stable operation

• Compact TO-220 package simplifies installation and maximises space

Applications


• High-power in electrical circuits

• Robotics and automation systems

• Power management for electronic devices

• Motor drives and inverters

• Power supply circuits for increased efficiency

How does this device perform under varying temperatures?


This MOSFET operates effectively from -55°C to +175°C, ensuring reliability in different environmental conditions.

What type of circuit configuration is compatible with it?


It is well-suited for circuits that require N-channel MOSFET functionality, effectively managing high current flows and voltage levels.

What are the implications of its gate threshold voltage?


With a gate threshold voltage between 1V and 2V, it allows for switching at low voltages, facilitating integration into control circuits.

How does thermal management influence its operation?


Efficient thermal management is crucial, enabling the device to maintain performance without overheating, especially in high-power or continuous applications.

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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